Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.11b
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- Pages.126-129
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- 2001
p-n heterojunction composed of n-ZnO/p-Zn-doped InP
n-ZnO/p-Zn doped InP의 p-n 이종접합 형성에 관한 연구
Abstract
A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.