대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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- Pages.165-167
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- 2001
가우시안 농도 분포를 갖는 PT-IGBT의 에미터 주입효율
Emitter Injection Efficiency of Gaussian Impurity Distributions in PT-IGBT
- Kim, Chung-Hee (School of Electronics Engineering, Ajou University) ;
- Choi, Yeam-Ik (School of Electronics Engineering, Ajou University) ;
- Chung, Sang-Koo (School of Electronics Engineering, Ajou University)
- 발행 : 2001.11.03
초록
Emitter injection efficiency of p+/n-buffer Junction with Gaussian impurity distribution is presented. This model takes into account the variation of the carrier lifetime with injection level which allows a unified interpretation of the injection efficiency for all injection level. The injected carrier density and injection efficiency of the anode are calculated as a function of the current density with the low level lifetime as a parameter for different thicknesses of the anode. The analytical results agree well with simulation.
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