Characteristics of ZnO Thin film by Gas Ratio

Gas비에 따른 ZnO박막의 압전특성

  • 이우선 (조선대학교 전기공학과) ;
  • 조준호 (조선대학교 전기공학과) ;
  • 정헌상 (조선대학교 전기공학과) ;
  • 정찬문 (조선대학교 전기공학과) ;
  • 손동민 (조선대학교 전기공학과)
  • Published : 2001.11.03

Abstract

ZnO thin films on glass substrate were deposited by RF sputter with various $Ar/O_2$ gas ratio. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD(x-ray diffractometer), and SEM (scanning electron microscopy) analyses. The facing targets sputtering system can deposit thin film at plasma free condition and change the deposition condition in wide range. We suggested that a very suitable $Ar/O_2$ gas of ratio should be 50/50 for preparation of high quality ZnO films with good C-axis orientation.

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