Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the electrical Characteristics of High Voltage LDMOSFET in Low Temperature

고내압 LDMOSFET의 저온 특성에 관한 연구

  • 박재형 (서강대학교 전자공학과) ;
  • 이호영 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2001.06.01
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Abstract

LDMOSFET devices operated at low temperature have applications on satellite, space shuttle and low temperature system, etc. In this study, we measured the electrical characteristics of 100v Class LDMOSFET for low temperature application. Measurement data are taken over a wide range of temperatures (100K-300K) and various drift region lengths(6.6${\mu}{\textrm}{m}$, 8.4${\mu}{\textrm}{m}$, 12.6${\mu}{\textrm}{m}$). Maximum transconductance, $g_{m}$ and drain current at low temperatures(~100K) increased over about 260%, 50% respectively, in comparison with the data at room temperature. Breakdown voltage B $V_{ds}$, and specific on- resistance decreased. Besides, ratio $R_{on}$ BV, a figure of merit of the device, decreased with decreasing temperature.

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