Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2001.06b
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- Pages.197-200
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- 2001
$SiO_2$ Etching in $C_4F_{8}$ Plasma by E-ICP
$C_4F_{8}O_2$ 공정기체와 E-ICP를 이용한 산화막 식각
Abstract
Novel Enhanced Inductively Coupled Plasma is applied to etch
Keywords