대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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- Pages.17-20
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- 2001
희생층과 압전층의 면적변화에 따른 ZnO 압전박막을 이용한 Air-gap Type FBAR의 특성
Characteristics of Air-Gap Type FBARs Using ZnO Piezoelectric Thin Film With Varying Dimension of Sacrificial and Piezoelectric layer
초록
In this paper, film bulk acoustic resonator(FBAR) with an air-gap is fabricated by removing ZnO sacrificial layer and its characteristics as a various dimension of ZnO sacrificial and piezoelectric layer is evaluated. The center frequency of the FBAR device with the ZnO film is about 1.9 GHz. Because of mass-loading effect, a dimension of sacrificial layer and piezoelectrc layer affect frequency response such as center frequency, insertion loss, band separation, attenuation and so on.
키워드