대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

광학적 투명성을 가진 ITO를 에미터 전극으로 사용한 InP/lnGaAs HPT's의 DC 특성 분석

DC Characteristics of InP/InGaAs HPT's with an Optically Transparent ITO Emitter electrode

  • 강민수 (영남대학교 전자공학과) ;
  • 한교용 (영남대학교 전자공학과)
  • 발행 : 2001.06.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

InP/InGaAs Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter electrode were fabricated and characterized. At the same time, heterojuntion transistors(HBT's) having the same device layout were fabricated. By comparison with InP/InGaAs HBT's, the do characteristics of InP/InGaAs HPT's showed the similar electrical charateristics of HBT's. the model parameters of the device were extracted and compared.

키워드