Ar/CF$_4$/Cl$_2$ 플라즈마에 의한 CeO$_2$ 박막의 식각 특성 연구

A study on etch Characteristics of CeO$_2$ thin Film in an Ar/CF/C1$_2$ Plasma

The possibility of cerium dioxide (CeO$_{7}$ ) thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching CeO$_2$ thin films have been performed in an inductively coupled C1$_2$/CF$_4$/Ar plasma. The high etch rate of the CeO$_2$ thin film was 250 ${\AA}$/m at a 10% addition of Cl$_2$ into the Ar(80)/CF$_4$(20). The surface reaction of the etched CeO$_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.