한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 추계학술대회 논문집
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- Pages.221-225
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- 2001
AlGaN/GaN HFET의 기판에 따른 열효과 분석 모델링
Thermal Effect Modeling for AlGaN/GaN HFET on Various Substrate
초록
In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate