Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Defect evaluation of Fe metallic contamination in silicon wafers

Si 웨이퍼의 내부 금속 불순물 Fe의 결함분석

  • 오민환 (영남대학교 전자공학과) ;
  • 남효덕 (영남대학교 전자정보공학과) ;
  • 김흥락 (포항산업과학연구원 센서·계측연구팀) ;
  • 김동수 (포항산업과학연구원 센서·계측연구팀) ;
  • 김영덕 (포항산업과학연구원 센서·계측연구팀) ;
  • 김광일 (포항산업과학연구원 센서·계측연구팀)
  • Published : 2001.07.01
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Abstract

Silicon wafers using DRAM devices required for high cleaning technology and this cleaning technology was evaluated by defect level or electron life time. This paper examined the correlation of SPV(Surface Photo Voltaic Analyzer) which analyzes diffusion length of minority carriers and DLTS(Deep level Transient Spectroscope) which analyzes defect level.

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