한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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펄스 레이저 증착법을 이용한 실리콘 박막의 어닐링 온도 변화에 따른 발광 특성연구

Effect of Annealing Temperature on the Luminescence of Si Nanocrystallites Thin Flms Fabricated by Pulsed Laser Deposilion

  • 김종훈 (연세대학교 전기전자공학과) ;
  • 전경아 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • 발행 : 2001.07.01
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초록

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films depending on the variation of the annealing temperature.

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