Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.25-28
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- 2001
A Study on the Reliability and Reproducibility of 571 CMP process
STI CMP 공정의 신뢰성 및 재현성에 관한 연구
Abstract
Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. Without applying the conventional complex reverse moat process, CMP(Chemical Mechanical Polishing) has established the Process simplification. However, STI-CMP process have various defects such as nitride residue, torn oxide defect, damage of silicon active region, etc. To solve this problem, in this paper, we discussed to determine the control limit of process, which can entirely remove oxide on nitride from the moat area of high density as reducing the damage of moat area and minimizing dishing effect in the large field area. We, also, evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions.
Keywords
- 571(Shallow Trench Isolation);
- CMP(Chemical Mechanical Polishing);
- Moat;
- Reliability;
- Reproducibility