IGBT Mesh-Topology Modeling And Its Application To Latch-Up Performance

  • Zhang H. (Department of Electronic Engineering, Xi'an University of Technology, P.R.C.,) ;
  • Duan F. (Department of Electronic Engineering, Xi'an University of Technology, P.R.C.,)
  • Published : 2001.10.01

Abstract

A new mesh-topology model of IGBT is presented. It can be applied to the research of IGBT's static and dynamic latch-up (du/dt latch-up, overheat latch-up, overload latch-up, overvoltage latch-up) as well as the switching on-off behavior of the device. The overcurrent latch-up is analyzed.

Keywords