대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2001년도 하계학술대회 논문집 C
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- Pages.1369-1371
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- 2001
전기화학적 식각정지에 의한 SDB SOI의 박막화
Thinning of SDB SOI by electrochemical etch-stop
- Chung, Yun-Sik (Electronic Eng. Pukyong national univ.) ;
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Chung, Gwiy-Sang
(School of information and system Eng. Dongseo univ)
- 발행 : 2001.07.18
초록
This paper describes on thinning SDB SOI substrates by SDB technology and Electro-chemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic passivation potential. The surface roughness and selectively controlled thickness of the fabricated SOI substrates were analyzed by using AFM and SEM, respectively.
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