한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Properties of Thin Film a-Si:H and Poly-Si TFT's

  • Ahn, Byeong-Jae (Department of Electrical and Computer Engineering, SungKyunKwan University) ;
  • Kim, Do-Young (Department of Electrical and Computer Engineering, SungKyunKwan University) ;
  • Yoo, Jin-Su (Department of Electrical and Computer Engineering, SungKyunKwan University) ;
  • Yi, Jun-Sin (Department of Electrical and Computer Engineering, SungKyunKwan University)
  • 발행 : 2000.04.22
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초록

A-Si:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly-Si films were achieved by various anneal techniques ; isothermal, RTA, and excimer laser anneal. The TFT on as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from $200^{\circ}C$ to $1000^{\circ}C$. The TFT on poly-Si showed an improved $I_{on}/I_{off}$ ratio of $10^6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly-Si TFTs.

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