Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)

Optical Society of Korea (한국광학회)
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Fabrication and analysis of 400DPI LED array

400DPI LED array 제작 및 평가

  • 박광범 (전자부품연구원 마이크로머신연구센터) ;
  • 김인회 (전자부품연구원 마이크로머신연구센) ;
  • 문현찬 (전자부품연구원 마이크로머신연구센) ;
  • 신상모 (전자부품연구원 마이크로머신연구센) ;
  • 이태호 (비텍반도체(주) ;
  • 주동욱 (비텍반도체(주))
  • Published : 2000.02.01
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Abstract

400DPI LED array was fabricated by using reactive ion etching(RIE) method. Material of fabricated LED array was used the GaP for green light emitting and had a homojunction structure. Each cells of emitting area in the LED array were defined with RIE etching for electrical isolation between cells. Electrodes were formed on each cells to emit independently. Ohmic contact resistivity was approximate 1.2$\times$10$^{5}$ $\Omega$/$\textrm{cm}^2$ and 1.26$\times$10$^{5}$ $\Omega$/$\textrm{cm}^2$ using isothermal annealing at 38$0^{\circ}C$ and 43$0^{\circ}C$. Emitting intensity of each etmitting cell was 1.65 cd/$m^2$.

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