한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2000년도 추계학술대회 논문집
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- Pages.17-20
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- 2000
MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어
Control of Defect Produced in a Retrograde Triple Well Using MeV Ion Implantation
초록
This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R