대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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- Pages.13-16
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- 2000
AlGaAs/InGaAs/GaAs 이종접합 양자선-FET의 제작 및 특성
Fabrication and Characteristization of AlGaAs/InGaAs/GaAs Heterostructure Quantum-Wire FET
초록
A quantum-wire field effect transistor(QW-FET) using asymmetric double InGaAs channel and Si-delta doped barrier has been fabricated. It exhibited good modulation and saturation characteristic in the range of
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