GaAs/InGaP HBT 소신호 등가회로 모델 파라미터의 새로운 추출방법

A New Extraction Method of GaAs/InGaP HBT Small-signal Equivalent Circuit Model Parameters

This paper describes a parameter extraction method for HBT(Heterojunction Bipolar Transistor) equivalent circuit model without measurements of special test structures or numerical optimizations. Instead, all equivalent circuit parameters are calculated analytically from small-signal S-parameters measured under different bias conditions. These values being extracted from the cutoff mode can be used to extract intrinsic parameters at the active mode. This method yields a deviation of about 1.3 % between the measured and modeled S-parameters.