Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

A New Small Signal Modeling of RE MOSFETs including Charge Conservation Capacitances

  • Ickjin Kwon (Department of EECS, Korea Advanced Institute of Science and Technology) ;
  • Minkyu Je (Department of EECS, Korea Advanced Institute of Science and Technology) ;
  • Lee, Kwyro (Department of EECS, Korea Advanced Institute of Science and Technology) ;
  • Hyungcheol Shin (Department of EECS, Korea Advanced Institute of Science and Technology)
  • Published : 2000.07.01
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Abstract

A novel extraction method of high frequency small-signal model parameters for MOSFETS is proposed. From S-parameter measurement, this technique accurately extracts the model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled parameters fit the measurements very well without any optimization.

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