Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the High Temperature Characteristics of 100V-Class LDMOSFET under various Drift Region Length

고온 동작 환경에서 드리프트 영역 길이 변화에 따른 100V급 LDMOSFET의 전기적 특성에 관한 연구

  • 최철 (서강대학교 전자공학과) ;
  • 김도형 (서강대학교 전자공학과) ;
  • 구용서 (서경대학교 전자공학과) ;
  • 안철 (서강대학교 전자공학과)
  • Published : 2000.06.01
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Abstract

In this study, the electrical characteristics of 100V -Class LDMOSFET for high temperature applications such as electronic control systems of automobiles and motor driver were investigated. Measurement data are taken over wide range of temperature(300K-500K) and various drift region length(6.6$\mu\textrm{m}$-12.6$\mu\textrm{m}$). In high temperature condition(>450K), drain current decreased over 50％, and specific on-resistance increased about twice in comparison with room temperature. Moreover the ratio R$\sub$on//BV, a figure of merit of the device, increased with increasing temperature.

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