대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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- Pages.60-63
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- 2000
고온스퍼터링법으로 제작된 티타늄실리사이드의 구조적 전기적 특성 연구
Electrical and morphological properties of titanium silicide fabricated by high temperature sputtering method
- 이세준 (동국대학교 반도체과학과) ;
- 김두수 (동국대학교 반도체과학과) ;
- 성규석 (동국대학교 반도체과학과) ;
- 강윤묵 (동국대학교 반도체과학과) ;
- 차정호 (동국대학교 반도체과학과) ;
- 송민규 (동국대학교 반도체과학과) ;
- 정웅 (동국대학교 반도체과학과) ;
- 김득영 (동국대학교 반도체과학과) ;
- 이연환 (동국대학교 물리학과) ;
- 조훈영 (동국대학교 물리학과) ;
- 홍종성 (삼척대학교)
- Lee, S.J. (Dept. of Semiconductor Science Dongguk University) ;
- Kim, D.S. (Dept. of Semiconductor Science Dongguk University) ;
- Seong, K.S. (Dept. of Semiconductor Science Dongguk University) ;
- Kang, Y.M. (Dept. of Semiconductor Science Dongguk University) ;
- Cha, J.H. (Dept. of Semiconductor Science Dongguk University) ;
- Song, M.K. (Dept. of Semiconductor Science Dongguk University) ;
- Jung, W. (Dept. of Semiconductor Science Dongguk University) ;
- Kim, D.Y. (Dept. of Semiconductor Science Dongguk University) ;
- Lee, Y.H. (Dept. of Physics Dongguk University) ;
- Cho, H.Y. (Dept. of Physics Dongguk University) ;
- Hong, J.S. (Samchuk National University)
- 발행 : 2000.06.01
초록
We have investigated the relationship between electrical and morphological properties of titanium silicide films. In this study, the C54 titanium silicides were formed by using high temperature sputtering and one-step annealing. From the measurement of electrical and morphological properties, a smooth surface and a relaxed roughness were observed for the titanium silicide film fabricated by high temperature sputtering. And it seems that the previous effect could improve electrical properties.
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