대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

고온스퍼터링법으로 제작된 티타늄실리사이드의 구조적 전기적 특성 연구

Electrical and morphological properties of titanium silicide fabricated by high temperature sputtering method

  • 이세준 (동국대학교 반도체과학과) ;
  • 김두수 (동국대학교 반도체과학과) ;
  • 성규석 (동국대학교 반도체과학과) ;
  • 강윤묵 (동국대학교 반도체과학과) ;
  • 차정호 (동국대학교 반도체과학과) ;
  • 송민규 (동국대학교 반도체과학과) ;
  • 정웅 (동국대학교 반도체과학과) ;
  • 김득영 (동국대학교 반도체과학과) ;
  • 이연환 (동국대학교 물리학과) ;
  • 조훈영 (동국대학교 물리학과) ;
  • 홍종성 (삼척대학교)
  • Lee, S.J. (Dept. of Semiconductor Science Dongguk University) ;
  • Kim, D.S. (Dept. of Semiconductor Science Dongguk University) ;
  • Seong, K.S. (Dept. of Semiconductor Science Dongguk University) ;
  • Kang, Y.M. (Dept. of Semiconductor Science Dongguk University) ;
  • Cha, J.H. (Dept. of Semiconductor Science Dongguk University) ;
  • Song, M.K. (Dept. of Semiconductor Science Dongguk University) ;
  • Jung, W. (Dept. of Semiconductor Science Dongguk University) ;
  • Kim, D.Y. (Dept. of Semiconductor Science Dongguk University) ;
  • Lee, Y.H. (Dept. of Physics Dongguk University) ;
  • Cho, H.Y. (Dept. of Physics Dongguk University) ;
  • Hong, J.S. (Samchuk National University)
  • 발행 : 2000.06.01
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초록

We have investigated the relationship between electrical and morphological properties of titanium silicide films. In this study, the C54 titanium silicides were formed by using high temperature sputtering and one-step annealing. From the measurement of electrical and morphological properties, a smooth surface and a relaxed roughness were observed for the titanium silicide film fabricated by high temperature sputtering. And it seems that the previous effect could improve electrical properties.

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