A study on Ultrashallow PN junction formation by boron implantation in Silicon

실리콘에 Boron 이온 주입에 의한 Ultrashallow PN접합 형성에 관한 연구

In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.