Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2000.09a
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- Pages.33-59
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- 2000
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
Magnetic Tunnel Junction based non-volatile Magnetoresistive RAM
- Tehrani, S. (Motorola Labs, Physical Sciences Research Laboratories) ;
- Durlam, M. (Motorola Labs, Physical Sciences Research Laboratories Tempe, USA) ;
- Naji, P. (Motorola Labs, Physical Sciences Research Laboratories Tempe, USA) ;
- DeHerrera, M. (Motorola Labs, Physical Sciences Research Laboratories Tempe, USA) ;
- Chen, E.Y. (Motorola Labs, Physical Sciences Research Laboratories Tempe, USA) ;
- Slaughter, J.M. (Motorola Labs, Physical Sciences Research Laboratories Tempe, USA) ;
- Rizzo, N. (Motorola Labs, Physical Sciences Research Laboratories Tempe, USA) ;
- Engel, B. (Motorola Labs, Physical Sciences Research Laboratories Tempe, USA)
- Published : 2000.09.01
Abstract
Demonstrated uniform MR and resistance across 6 inch wafer, Demonstrated successful integration of MTJ and CMOS, Measured address access time of 8ns and read cycle time of 18ns for 256
Keywords