한국마이크로전자및패키징학회:학술대회논문집 (Proceedings of the International Microelectronics And Packaging Society Conference)
- 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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- Pages.118-118
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- 2000
MOCVD Deposition of AlN Thin Film for Packaging Materials
- Chang-Kyu, Ahna (Department of Materials Engineering, Ajou University) ;
- Seung-Chul Choi (Department of Materials Engineering, Ajou University) ;
- Seong-Hoon Cho (Cleantech Center, KIST) ;
- Sung-Hwan Han (Cleantech Center, KIST) ;
- Je-Hong Kyoung (SamSung Electronic Com.)
- 발행 : 2000.04.01
초록
New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to
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