RF 스퍼터링법에 의한 SBT박막의 분극특성

Polarization Properties of SBT Thin Film by RF Sputtering

  • 김태원 (광운대학교 전기공학과) ;
  • 조춘남 (광운대학교 전기공학과) ;
  • 김진사 (광운대학교 전기공학과) ;
  • 유영각 (충청대학 전자과) ;
  • 김충혁 (광운대학교 전기공학과) ;
  • 박용필 (동신대학교 전기전자공학과) ;
  • 이준웅 (한국전기전자재료학회장)
  • 발행 : 2000.07.01

초록

The SrBi$_2$Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF sputtering method. The SBT thin films deposited on substrate at 400-500[$^{\circ}C$]. SBT thin film deposited on Pt-coated electrodes have the cubic perovskite structure and polycrystalline state. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], flourite Phase was crystalized to 650[$^{\circ}C$] and Bi-layered perovskite phase was crystalized above 700[$^{\circ}C$]. The maximum remanent polarization is 11.73 ${\mu}$C/cm$^2$at 500[$^{\circ}C$] of substrate temperature and 750[$^{\circ}C$] annealing temperature for 30min.

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