Pt이 도핑된 박막 전지용 비정질 산화바나듐 박막의 구조적 변화

Structure evolution of Pt doped amorphous $V_{2}O_{5}$ cathode film for thin film battery

  • 김한기 (한국과학기술원(KIST) 박막기술연구센터) ;
  • 전은정 (한국과학기술원(KIST) 박막기술연구센터) ;
  • 옥영우 (한국과학기술원(KIST) 박막기술연구센터) ;
  • 성태연 (한국과학기술원(KIST) 박막기술연구센터) ;
  • 조원일 (한국과학기술원(KIST) 전지, 연료전지센터) ;
  • 윤영수 (한국과학기술원(KIST) 박막기술연구센터)
  • 발행 : 2000.07.01

초록

We have investigated the Pt doping effect on structural and electrochemical properties of amorphous vanadium oxide film, grown by radio frequency magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction (GXRD) and high resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with l0W r.f. power induce more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt increases, large amount of Pt incorporates into amorphous V$_2$O$_{5}$ and makes PtOx microcrystalline phase in amorphous matrix. This result suggests that the semicondcuting PtOx microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibility of vanadium oxide cathode film.de film.

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