한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2000년도 하계학술대회 논문집
- /
- Pages.55-58
- /
- 2000
Ge profile 변화에 의한 SiGe HBT 소자 특성 시뮬레이션
Simulation Study on Effect of Ge Profile Shape on SiGe HBT Characteristics
초록
SiGe heterojuction bipolar transistors (HBT) have been studied and applied for advanced high speed integrated circuits. Device characteristics of SiGe HBT depending on the Ge profile of the transistor base region have been analysed using a device simulator, ATLAS/BLAZE. The models and parameters have been calibrated to the measured characteristics of the device, having a trapeziodal base profile, including the cut-off frequency of 45GHz and the dc current gain of 200. The Ge concentration which increases linearly, exponentially, or root-functionally from the emitter-base junction to the base-collector junction, has been tried to find out the influence on the device characteristics. The cut-off frequency and gain rather strongly depends on the exponential and root-functional Ge base profiles, respectively.