한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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- Pages.180-180
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- 2000
Plasma source ion implantations for shallow $p^+$ /n junction
- Jeonghee Cho (Department of Physics, Hanyang University-Ansan, Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Seuunghee Han (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Lee, Yeonhee (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Kim, Lk-Kyung (Department of Physics, Hanyang University-Ansan) ;
- Kim, Gon-Ho (Department of Physics, Hanyang University-Ansan) ;
- Kim, Young-Woo (Department of Physics, Hanyang University-Ansan,Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Hyuneui Lim (Advanced Analysis Center, Korea Institute of Science and Technology) ;
- Moojin Suh (Advanced Analysis Center, Korea Institute of Science and Technology)
- 발행 : 2000.02.01
초록
Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1
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