계면처리에 의한 pentacene 박막의 전기적 특성 연구

A Study on the Electrical Characteristics of Pentacene Thin Film by Using Surface Treatment

There are currently considerable interests in the applications of conjugated polymers, oligomers. and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field-effect transistors and light-emitting diodes. In this study we fabricated the devices based on pentacene as active layer. Octadecyltrichlorosilane (OTS) is used as buffer layer between $SiO_2$ and pentacene. Atomic force microscopy (AFM), X-ray diffraction (XRD), and electrical conductivity were used with OTS on $SiO_2$ 10nm which the pentacene layer was thermally evaporated in vacuum at a pressure of about $2.0\times10^{-6}$ Torr. In the result of AFM, the grain length is grown by using OTS for surface treatment. Electrical conductivity is changed from $3.19{\times}10^{-6}$ S/cm to $2.12{\times}10^{-7}$ S/cm. We observed that electrical conductivity is also increased by surface treatment. According to these results, the surface treated devices exhibited the increase to compared no treatment.