Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.07c
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- Pages.1471-1473
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- 2000
Dielectric Properties of $SrTiO_3$ -based varistors
$SrTiO_3$ 바리스터의 유전특성
- Kang, D.H. (Pukyong National University) ;
- Park, I.Y. (Pukyong National University) ;
- Shim, J.G. (Pukyong National University)
- Published : 2000.07.17
Abstract
In this study capacitance and dielectric loss factor were measured with low-voltage signal and the simulation of equivalent circuits for the data were conducted. As the result it was showed that the equivalent circuit model considered the gram-boundary structure with semiconducting layer, dielectric layer and depletion layer was well approximated with the observed data. Various parameters were determined by a optimum curve-fitting method and could be used to analyze the varistor-voltages and the nonlinear coefficient of varistors. It also seems that the proposed equivalent circuit model will be adopted for other BL type varistors.
Keywords