Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1999.11d
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- Pages.956-958
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- 1999
The design and fabrication of photo sensor for CMOS image sensor
CMOS 영상 센서를 위한 광 센서의 설계 및 제작
- Shin, K.S. (Electronic Material and Device Research Center, KIST) ;
- Ju, B.K. (Electronic Material and Device Research Center, KIST) ;
- Lee, Y.H. (Electronic Material and Device Research Center, KIST) ;
- Paek, K.K. (Dept. of Electronic Eng., Daejin Univ.) ;
- Lee, Y.S. (Dept. of Electronic Eng., Chungwoon Univ.) ;
- Park, J.H. (Dept. of Electronic Eng., Korea Unv.) ;
- Oh, M.H. (Electronic Material and Device Research Center, KIST)
- 신경식 (한국과학기술연구원 정보재료 및 소자 연구센터) ;
- 주병권 (한국과학기술연구원 정보재료 및 소자 연구센터) ;
- 이윤희 (한국과학기술연구원 정보재료 및 소자 연구센터) ;
- 백경갑 (대진대학교 전자공학과) ;
- 이영석 (청운대학교 전자공학과) ;
- 박정호 (고려대학교 전자공학과) ;
- 오명환 (한국과학기술연구원 정보재료 및 소자 연구센터)
- Published : 1999.11.20
Abstract
We designed and fabricated p-type MOSFETs with floating gate in n-type well lesion and examined their photo characteristics. The fabricated MOBFETs showed a high photo-respsonse characteristics, indicating a possibility as a photo sensor. The structures of MOSFETs were changed as to the number of gate and channel. As the number of channel increased, the induced current by light source s increased. However, the effect of the number of gate was negligble on the photo-response characteristics of the device.
Keywords