Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1999.11a
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- Pages.895-898
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- 1999
Classical Molecular Dynamics Study of Al lonized Physical Vapor Deposition on Silicon Surface
고전 자동역학 방법을 사용한 실리콘 표면위의 이온화된 Al의 물리기상증착에 관한 연구
- Kang, Jeong-Won (Department of Electronic engineering, Chung-Ang University) ;
- Lee, Young-Ghik (Department of Electronic engineering, Chung-Ang University) ;
- Mun, Won-Ha (Department of Electronic engineering, Chung-Ang University) ;
- Son, Myung-Sik (Department of Electronic engineering, Se-Myung University) ;
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Hwang, Ho-Jung
(Department of Electronic engineering, Chung-Ang University)
- Published : 1999.11.01
Abstract
We calculated Al-Absorption, Al-reflection, and Si-etching probabilities as a function of incident angle and energy using classical molecular dynamics (MD) simulation. Variations of the cases of Al-absorption rate and Al-reflection rate are less than that of Si-etching rate. In contrast with general prediction, our simulation results showed that channeling of the <110> direction occurred the most in the case of incident angle between 30degree and 40degree. We investigated that channeling of the <110> directions quite affect Al-absorption rate in silicon. Since Si-etching rate is high and Al-absorption rate by <110> channeling is high, we found that Al ionized physical vapor deposition (PVD) on Si(001) has a different characteristics with Al ionized PVD on A1(111).
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