Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1999.11a
- /
- Pages.891-894
- /
- 1999
3D Etching Profile used Inductive Coupled Plasma (ICP) Source with Ambipolar Drift and Binary-Collision Effect.
쌍극성표동 효과와 이체충돌효과를 고려한 ICP(Inductive Coupled Plasma) 3차원 식각
Abstract
ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1
Keywords