대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1999년도 추계종합학술대회 논문집
- /
- Pages.879-882
- /
- 1999
기판 전압이 p-채널 플래쉬 메모리의 쓰기 및 소거 특성에 미치는 영향
Effect of Substrate Bias on the Performance of Programming and Erasing in p-Channel Flash Memory
초록
The effects of the substrate bias on the performance of programming erasing in p-channel flash memory cell have been investigated. It is found that applying positive substrate bias can improve the programming and erasing speed. This improvements can be explained by Substrate Current Induced Hot Electron Injection. From the results, we can confirm that BTB programming method is better in programming and erasing speed than CHE programming method.
키워드