Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1999.11a
- /
- Pages.875-878
- /
- 1999
A Study on the Transconductance Change of submicron LDD NMOSFETs under back bias
submicron LDD NMOSFET에서 back bias에 따른 transconductance 변화에 대한 연구
- Won, Myoung-Kyu (Dept of Electronic Eng. Sogang Univ.) ;
- Koo, Yong-Seo (Dept. of Electronic Eng. Seokyeong Univ.) ;
- An, Chul (Dept of Electronic Eng. Sogang Univ.)
- Published : 1999.11.01
Abstract
In this paper, we measured and simulated the transconductance change of submicron LDD NMOSFETs due to back bias under various channel length, temperature and substrate doping conditions. As back bias is increased, the mobility will decrease and g
Keywords