대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

0.25${\mu}{\textrm}{m}$ 표준 CMOS 공정을 이용한 RF 전력증폭기

RF Power Amplifier using 0.25${\mu}{\textrm}{m}$ standard CMOS Technology

  • 박수양 (청주대학교 대학원 전자공학과) ;
  • 전동환 (청주대학교 대학원 전자공학과) ;
  • 송한정 (충청대학교 전자공학과) ;
  • 손상희 (청주대학교 전자·정보통신·반도체공학부)
  • 발행 : 1999.11.01
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초록

A high efficient, CMOS RF power amplifier at a 2.SV power supply for the band of 902-928MHz was designed and analyzed in 0.25${\mu}{\textrm}{m}$ standard CMOS technology. The output power of designed amplifier is being digitally controlled from a minimum of 2㎽ to a maximum of 21㎽, corresponding to a dynamic range of l0㏈ power control. The frequency response of this power amplifier is centered roughly at 915MHz. The power added efficiency of designed amplifer is almost 48% at maximum output power of 21㎽.

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