Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 1999.11a
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- Pages.208-211
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- 1999
Electrical Characteristics and Models for Asymmetric n-MOSFET′s with Irregular Source/Drain Contacts
불규칙한 소오스/드레인 금속 접촉을 갖는 비대칭 n-MOSFET의 전기적 특성 및 모델
Abstract
Abstract - Electrical characteristics or asymmetric n-MOSFET's with different source and drain geometry are experimently investigated using test structures having various gate width. Saturation drain current and resistance in linear region are estimated by a simple schematic model, which consists of conventional device having parasitic resistor. A comparison of experimental results of symmetric and asymmetric devices gives the parasitic resistance caused by abnormal device structure. The suggested model shows good agreement with the measured drain current for both forward- and reverse-modes.
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