Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Development of Analysis Simulation Tool of High-Energy Ion Implantation Process for GSI MOS Transistor

GSI급 MOS Transistor 개발을 위한 HEI (High-Energy Ion Implantation) 공정 분석 시뮬레이터 개발

  • 손명식 (세명대학교 전자공학과 반도체 통합 시스템 연구실) ;
  • 박수현 (중앙대학교 전자공학과 반도체 공정소자연구실) ;
  • 이영직 (중앙대학교 전자공학과 반도체 공정소자연구실) ;
  • 권오근 (중앙대학교 전자공학과 반도체 공정소자연구실) ;
  • 황호정 (중앙대학교 전자공학과 반도체 공정소자연구실)
  • Published : 1999.06.01
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Abstract

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.

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