A New Asymmetric SOI Device Structure for High Current Drivability and Suppression of Degradation in Source-Drain Breakdown Voltage

전류구동 능력 향상과 항복전압 감소를 줄이기 위한 새로운 비대칭 SOI 소자

The breakdown voltage in fully depleted SOI N-MOSFET’s have been studied over a wide range of film thicknesses, channel doping, and channel lengths. An asynmmetric Source/Drain SOI technology is proposed, which having the advantages of Normal LDD SOI(Silicon-On-Insulator) for breakdown voltage and gives a high drivability of LDD SOI without sacrificings hot carrier immunity The two-dimensional simulations have been used to investigate the breakdown behavior in these device. It is found that the breakdown voltage(BVds) is almost same with high current drivability as that in Normal LDD SOI device structure.