대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 1999년도 하계종합학술대회 논문집
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- Pages.911-913
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- 1999
트렌치 깊이에 따른 트랜지스터와 소자분리 특성
Characteristics of Transistors and Isolation as Trench Depth
초록
Shallow Trench Isolation (STI) has become the most promising isolation scheme for ULSI applications. The stress of STI structure is one of several factors to degrade characteristics of a device. The stress contours or STI structure vary with the trench depth. Isolation characteristics of STI was analyzed as the depth of trench varied. And transistor characteristics was compared. Isolation punch-through voltage for n
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