I-V Characteristics of Praseodymium-Based ZnO Varistors Doped with Neodymium

네오디뮴이 첨가된 프라세오디뮴계 ZnO 바리스터의 I-V 특성

  • 박춘현 (동의대학교 전기공학과) ;
  • 윤한수 (동의대학교 전기공학과) ;
  • 남춘우 (동의대학교 전기공학과)
  • Published : 1999.05.01

Abstract

I-V characteristics of Praseodymium-based ZnO varistor doped with $Nd_2O_3$ in the range 0.0-2.0mol% sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were investigated. In the all sides, ZnO varistors sintered at $1300^{\circ}C$ exhibited much better varistor characteristics than that at 135$0^{\circ}C$. All ZnO varistors doped with $Nd_2O_3$ sintered at $1300^{\circ}C$ exhibited good varistor characteristics but particularly ZnO varistor doped with l.Omol% $Nd_2O_3$ exhibited the best characteristics, which the nonlinear is 65.2 and the leakage current is 4.5pA. It is estimated that ZnO varistor doped with l.Omol% $Nd_2O_3$ will begin to be sufficiently used as basic composition to fabricate a good varistor.

Keywords