Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1999.05a
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- Pages.26-29
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- 1999
The Analysis of I-V characteristics on n-channel offset gated poly-Si TFT`s
Offset 구조를 갖는 n-채널 다결정 실리콘 박막 트랜지스터의 I-V 분석
Abstract
The I-V characteristics of the n-channel offset gated poly-Si TETs have been systematically investigated in order to analyse the effects of offset region. The on currents are reduced due to the series resistance by the offset length and there is no kink phenomenon in offset devices. The off currents of the offset gated TFTs are remarkably reduced to 10