한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Si기판상에 제작된 박막형 백금 측온저항체 온도센서의 특성

Characteristics of Thin-film Type Pt-RTD's Fabricated on Si Wafers

  • 홍석우 (동서대학교 정보통신공학부) ;
  • 노상수 (부산대학교 재료공학부) ;
  • 정귀상 (동서대학교 정보통신공학부)
  • 발행 : 1999.11.01
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초록

This paper describes on the electrical and physical charateristics thin-film type Pt-RTD\\`s on Si wafers, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer. The MgO medium layer had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of room temperature to 40$0^{\circ}C$

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