Selective Dry Etching of InN/AlN/GaN System in $Cl_2$-, ICl- and IBr-Based Inductively Coupled Plasmas

$Cl_2$, ICl 및 IBr 유도병합 플라즈마를 이용한 InN/AlN/GaN 계의 선택적 식각

  • Hahn, Y.B. (School of Chemical Engineering & Technology, Chonbuk National University) ;
  • Im, Y.H. (School of Chemical Engineering & Technology, Chonbuk National University) ;
  • Cho, B.C. (School of Chemical Engineering & Technology, Chonbuk National University) ;
  • Park, J.S. (School of Chemical Engineering & Technology, Chonbuk National University) ;
  • Hong, J. (Samsung Semiconductors R &D Center) ;
  • Pearton, S.J. (Department of Materials Science & Engineering, University of Florida)
  • 한윤봉 (전북대학교 화학공학부) ;
  • 임연호 (전북대학교 화학공학부) ;
  • 조범철 (전북대학교 화학공학부) ;
  • 박진수 (전북대학교 화학공학부) ;
  • 홍진 (삼성반도체 연구소) ;
  • Published : 1999.11.01