한국결정성장학회:학술대회논문집 (Proceedings of the Korea Association of Crystal Growth Conference)
- 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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- Pages.129-157
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- 1999
LOW-DISLOCATION-DENSITY LARGE-DIAMETER GaAs SINGLE CRYSTAL GROWN BY VERTICAL BOAT METHOD
- Kawase, Tomohiro (Sumitomo Electric Industries, Ltd.) ;
- Tatsumi, Masami (Sumitomo Electric Industries, Ltd.) ;
- Fujita, Keiichiro (Sumitomo Electric Industries, Ltd.)
- 발행 : 1999.06.01
초록
Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.
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