Study on Electrical Characteristics of Metal/GaN Contact and GaN MESFET for Application of GaN Thin Film

GaN 박막의 활용을 위한 Metal/GaN 접촉과 GaN MESFET의 전기적 특성에 관한 연구

This paper was described electrical characteristics of Metal/GaN contact for application of GaN thin films. The lowest contact resistivity was $1.7\times10^{-7}[\Omega-cm^2]$ at Ti/Al Structure. Mean while, GaN MESFETs have been fabricated with a 250 nm thick channel on a high resistivity GaN layer grown by GAIVBE system. For a gate-source diode reverse bias of 35 V, the gate leakage current was $120{\mu}A$. From the data, we estimate the transconductance for our GaN MESFET to be 25 mS/mm.