Study on the Growth of GaN Film by GAIVBE Technique and Its Applications

GAIVBE 기법에 의한 GaN 박막의 형성과 그 활용성에 관한 연구

In this paper, we report a high quality GaN films with high hole concentrations and low resistivities without post growth treatment using a GAIVBE system equipped with a home-made inductively coupled RF plasma source. The room temperature hole concentrations obtained were $5{\times}10^{17}{\sim}1.6{\times}10^{19}cm^{-3}$, and the mobilities were $2.5{\sim}8cm^2/Vs$. Also we have grown high quality n-type GaN films with the range of electron concentrations of $1.4{\times}10^{17}{\sim}4.7{\times}10^{19}cm^{-3}$ and the mobilities of $180{\sim}410cm^2/Vs$.