Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1998.11a
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- Pages.9-12
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- 1998
Growth and Characteristics of NO/$N_2$ O Oxynitrided and Reoxidized Gate Dielectrics for Charge Trapping NVSMs
산화막의 NO/$N_2$ O 질화와 재산화 공정을 이용한 전하트랩형 NVSM용 게이트 유전막의 성장과 특성
Abstract
Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS analysis and C-V method in order to use the gate dielectric for charge-trap type NVSMs instead of ONO stacked layers. Nitric oxide(NO) annealed film has the nitrogen content sharply peaked at the Si-SiO
Keywords
- reoxidized nitrided oxide;
- SIMS;
- charge-trap type NVSM;
- ONO stacked layer;
- NO;
- $N_2$O anneal;
- reoxidation;
- nitrogen content;
- memory window;
- switching;
- retention